| PART |
Description |
Maker |
| MJE5850 MJE5850-D MJE5851 |
Power 8A 300V Discrete PNP
SWITCHMODE Series PNP Silicon Power Transistors
Power 8A 350V Discrete PNP
|
ON Semiconductor
|
| FDD16AN08A0 FDD16AN08A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m
N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm
N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз
N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| BUV19 |
Trans GP BJT NPN 80V 50A 3-Pin(2 Tab) TO-3
|
New Jersey Semiconductor
|
| MJ15011 MJ15011-D MJ15012 |
Power 10A 250V Discrete NPN
Complementary Silicon Power Transistors
Power 10A 250V Discrete PNP
|
ON Semiconductor
|
| FGW50N60VD |
Discrete IGBT (High-Speed V series) 600V / 50A
|
Fuji Electric
|
| HFB50HC20 |
200V 50A Hi-Rel Ultra-Fast Discrete Diode in a TO-258AA package
|
International Rectifier
|
| MJ15023 MJ15023-D |
Power 16A 200V Discrete PNP
Silicon Power Transistors
|
ON Semiconductor
|
| 2N5883 2N5883-D |
Power 25A 60V Discrete PNP
Complementary Silicon High-Power Transistors
|
ON Semiconductor
|
| 2N2060ADCSM 2N2060DCSM |
Dual Bipolar PNP Devices in a hermetically sealed
TRANSISTOR | BJT | PAIR | PNP | 80V V(BR)CEO | 500MA I(C) | LLCC
|
Seme LAB
|
| 2SB942A 0255 2SB942/2SB942A 2SB0942A2SB942A 2SB094 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 4A条一（c）| TO - 220AB现有
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 4A I(C) | TO-220AB
Power Device - Power Transistors - General-Purpose power amplification
3-Pin, Ultra-Low-Power SC70/SOT23 Voltage Detectors
From old datasheet system
|
TE Connectivity, Ltd.
Matsshita / Panasonic
|
